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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4130
DESCRIPTION *With TO-220F package *High voltage. *High speed switching APPLICATIONS *For switching regulator and general purpose applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 10 7 14 30 150 -55~150 UNIT V V V A A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=10V; IC=0 IC=3A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.5A ; VCE=12V 10 50 15 MIN 400
2SC4130
TYP.
MAX
UNIT V
0.5 1.3 100 100 30
V V A A
pF MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=3A; IB1=0.3A IB2=-0.6A VCC=200V ,RL=67 1.0 2.2 0.5 s s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4130
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4130
4


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